Micron Skipping Planned NAND Generation
Blocks & Files, Thursday, October 22nd, 2026
Micron will jump from G9 to G11 3D NAND, with twice the bit density and more than 400 layers, ramping in late 2027.
At a technology webinar, Micron CTO Scott DeBoer said the company will skip a planned NAND generation and move from its current 276-layer G9 to G11, which it optimized for future AI products.
Compared with G9, G11 offers twice the bit density, up to 1.5x faster I/O and 25% less energy per bit transferred.
It is based on wafer-on-wafer bonding, will exceed 400 layers and is due to ramp in the second half of next year.
DeBoer also outlined possible G11 products, including higher-speed SSDs with smaller block sizes.